| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
| 2012 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 2013 |
2SCR522EB |
NPN General Purpose Amplification Transistor |
ROHM |
| 2014 |
2SCR522EBTL |
NPN General Purpose Amplification Transistor |
ROHM |
| 2015 |
2SCR522M |
NPN General Purpose Amplification Transistor |
ROHM |
| 2016 |
2SCR522MT2L |
NPN General Purpose Amplification Transistor |
ROHM |
| 2017 |
2SCR522UB |
NPN General Purpose Amplification Transistor |
ROHM |
| 2018 |
2SCR522UBTL |
NPN General Purpose Amplification Transistor |
ROHM |
| 2019 |
2SCR523EB |
NPN General Purpose Amplification Transistor |
ROHM |
| 2020 |
2SCR523EBTL |
NPN General Purpose Amplification Transistor |
ROHM |
| 2021 |
2SCR523M |
NPN General Purpose Amplification Transistor |
ROHM |
| 2022 |
2SCR523MT2L |
NPN General Purpose Amplification Transistor |
ROHM |
| 2023 |
2SCR523UB |
NPN General Purpose Amplification Transistor |
ROHM |
| 2024 |
2SCR523UBTL |
NPN General Purpose Amplification Transistor |
ROHM |
| 2025 |
2SD1626 |
General Purpose Driver |
ON Semiconductor |
| 2026 |
2SD2121(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 2027 |
2SD2121(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 2028 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 2029 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 2030 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 2031 |
2SD2123(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 2032 |
2SD2675 |
General purpose amplification (30V/ 1A) |
ROHM |
| 2033 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
| 2034 |
2SD2707 |
General Purpose Transistor (50V/ 0.15A) |
ROHM |
| 2035 |
2SK118 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 2036 |
2SK208 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 2037 |
2SK3321 |
N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) |
TOSHIBA |
| 2038 |
2SK354A |
General purpose GaAs MESFET (This datasheet of the NE72089A is also the datasheet of 2SK354A, see the Electrical Characteristics table) |
NEC |
| 2039 |
2SK3704 |
N-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 2040 |
2SK879 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
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