| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
1N5625GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1952 |
1N5625GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 400V |
Vishay |
| 1953 |
1N5626 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1954 |
1N5626GP |
600 V, 3 A glass passivated junction rectifier |
Fagor |
| 1955 |
1N5626GP |
600 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
| 1956 |
1N5626GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1957 |
1N5626GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 600V |
Vishay |
| 1958 |
1N5627 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1959 |
1N5627GP |
800 V, 3 A glass passivated junction rectifier |
Fagor |
| 1960 |
1N5627GP |
800 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
| 1961 |
1N5627GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1962 |
1N5627GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 800V |
Vishay |
| 1963 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1964 |
1N5926B |
11 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1965 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1966 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1967 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1968 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1969 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1970 |
1N5928B |
13 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1971 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1972 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1973 |
1N5929B |
15 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1974 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1975 |
1N5930B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1976 |
1N5930B |
16 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1977 |
1N5930B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1978 |
1N5931B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1979 |
1N5931B |
18 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1980 |
1N5931B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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