| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N5932B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1982 |
1N5932B |
20 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1983 |
1N5932B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1984 |
1N5933B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1985 |
1N5933B |
22 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1986 |
1N5933B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1987 |
1N5934B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1988 |
1N5934B |
24 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1989 |
1N5934B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1990 |
1N5935B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1991 |
1N5935B |
27 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1992 |
1N5935B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1993 |
1N5936B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1994 |
1N5936B |
30 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1995 |
1N5936B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1996 |
1N5937B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1997 |
1N5937B |
33 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1998 |
1N5937B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1999 |
1N5938B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2000 |
1N5938B |
36 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2001 |
1N5938B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2002 |
1N5939B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2003 |
1N5939B |
39 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2004 |
1N5939B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2005 |
1N5940B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2006 |
1N5940B |
43 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2007 |
1N5940B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2008 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2009 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2010 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
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