No. |
Part Name |
Description |
Manufacturer |
1981 |
AQH1213 |
AQ-H SOLID STATE RELAY |
Matsushita Electric Works(Nais) |
1982 |
AQH1223 |
AQ-H SOLID STATE RELAY |
Matsushita Electric Works(Nais) |
1983 |
AQH2213 |
AQ-H SOLID STATE RELAY |
Matsushita Electric Works(Nais) |
1984 |
AQH2223 |
AQ-H SOLID STATE RELAY |
Matsushita Electric Works(Nais) |
1985 |
AQH3213 |
AQ-H SOLID STATE RELAY |
Matsushita Electric Works(Nais) |
1986 |
AQH3223 |
AQ-H SOLID STATE RELAY |
Matsushita Electric Works(Nais) |
1987 |
ATPH33MAHA |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TPH |
Panasonic |
1988 |
B3020R5A |
200VDC; 0.5Amp; PC board mount solid state relay |
International Rectifier |
1989 |
BD142 |
Silicon N-P-N high power transistor. 50V, 117W. |
General Electric Solid State |
1990 |
BD181 |
Silicon N-P-N high power transistor. 55V, 117W. |
General Electric Solid State |
1991 |
BD182 |
Silicon N-P-N high power transistor. 70V, 117W. |
General Electric Solid State |
1992 |
BD183 |
Silicon N-P-N high power transistor. 85V, 117W. |
General Electric Solid State |
1993 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
1994 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
1995 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
1996 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
1997 |
BD239 |
Pro electron power transistor |
General Electric Solid State |
1998 |
BD239A |
Pro electron power transistor |
General Electric Solid State |
1999 |
BD239B |
Pro electron power transistor |
General Electric Solid State |
2000 |
BD239C |
Pro electron power transistor |
General Electric Solid State |
2001 |
BD240 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. |
General Electric Solid State |
2002 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
2003 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
2004 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
2005 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
2006 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
2007 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
2008 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
2009 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
2010 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
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