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Datasheets for SOLI

Datasheets found :: 4967
Page: | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |
No. Part Name Description Manufacturer
2011 BD242B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. General Electric Solid State
2012 BD242C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. General Electric Solid State
2013 BD243 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. General Electric Solid State
2014 BD243A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. General Electric Solid State
2015 BD243B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. General Electric Solid State
2016 BD243C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. General Electric Solid State
2017 BD244 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. General Electric Solid State
2018 BD244A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. General Electric Solid State
2019 BD244B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. General Electric Solid State
2020 BD244C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. General Electric Solid State
2021 BD277 7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS General Electric Solid State
2022 BD277 7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS General Electric Solid State
2023 BD533 Epitaxial-base silicon N-P-N VERSAWATT transistor. 45V, 50W. General Electric Solid State
2024 BD534 Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. General Electric Solid State
2025 BD535 Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
2026 BD536 Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. General Electric Solid State
2027 BD537 Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. General Electric Solid State
2028 BD538 Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. General Electric Solid State
2029 BD550 SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS General Electric Solid State
2030 BD550B SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS General Electric Solid State
2031 BD643 8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
2032 BD645 8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
2033 BD647 8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
2034 BD649 8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. General Electric Solid State
2035 BD795 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. General Electric Solid State
2036 BD796 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. General Electric Solid State
2037 BD797 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. General Electric Solid State
2038 BD798 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. General Electric Solid State
2039 BD799 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. General Electric Solid State
2040 BD800 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. General Electric Solid State


Datasheets found :: 4967
Page: | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |



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