No. |
Part Name |
Description |
Manufacturer |
2011 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
2012 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
2013 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
2014 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
2015 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
2016 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
2017 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
2018 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
2019 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
2020 |
BD244C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
General Electric Solid State |
2021 |
BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS |
General Electric Solid State |
2022 |
BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS |
General Electric Solid State |
2023 |
BD533 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 45V, 50W. |
General Electric Solid State |
2024 |
BD534 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. |
General Electric Solid State |
2025 |
BD535 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
2026 |
BD536 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. |
General Electric Solid State |
2027 |
BD537 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. |
General Electric Solid State |
2028 |
BD538 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. |
General Electric Solid State |
2029 |
BD550 |
SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS |
General Electric Solid State |
2030 |
BD550B |
SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS |
General Electric Solid State |
2031 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
2032 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
2033 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
2034 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
2035 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
2036 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
2037 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
2038 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
2039 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
2040 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
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