| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
BDX40 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1982 |
BDX40 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1983 |
BDX41 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1984 |
BDX41 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1985 |
BDX50 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage switch |
SGS-ATES |
| 1986 |
BDX50 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage switch |
SGS-ATES |
| 1987 |
BDX51 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
| 1988 |
BDX51 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
| 1989 |
BDX60 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1990 |
BDX60 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1991 |
BDX61 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1992 |
BDX61 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1993 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1994 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1995 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 1996 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 1997 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 1998 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1999 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2000 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2001 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2002 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2003 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 2004 |
BF257 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2005 |
BF257E |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2006 |
BF258 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2007 |
BF259 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2008 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 2009 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 2010 |
BF297 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| | | |
