| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
BF298 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2012 |
BF299 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2013 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 2014 |
BF420A |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2015 |
BF421A |
Low power, high-voltage, video amplifier PNP transistor |
IPRS Baneasa |
| 2016 |
BF422A |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2017 |
BF423A |
Low power, high-voltage, video amplifier PNP transistor |
IPRS Baneasa |
| 2018 |
BF457 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2019 |
BF457E |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2020 |
BF458 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2021 |
BF459 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2022 |
BF469 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2023 |
BF470 |
Low power, high-voltage, video amplifier PNP transistor |
IPRS Baneasa |
| 2024 |
BF471 |
Low power, high-voltage, video amplifier NPN transistor |
IPRS Baneasa |
| 2025 |
BF472 |
Low power, high-voltage, video amplifier PNP transistor |
IPRS Baneasa |
| 2026 |
BF479T |
PNP silicon, high frequency transistor |
Mikroelektronikai Vallalat |
| 2027 |
BF506 |
PNP silicon, high frequency transistor |
Mikroelektronikai Vallalat |
| 2028 |
BF509 |
PNP silicon, high frequency transistor |
Mikroelektronikai Vallalat |
| 2029 |
BF679T |
PNP silicon, high frequency transistor |
Mikroelektronikai Vallalat |
| 2030 |
BF680 |
PNP silicon, high frequency transistor |
Mikroelektronikai Vallalat |
| 2031 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 2032 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 2033 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 2034 |
BFP181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 2035 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 2036 |
BFP181R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 2037 |
BFP181W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 2038 |
BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 2039 |
BFP182 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 2040 |
BFP182R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
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