No. |
Part Name |
Description |
Manufacturer |
1981 |
KM416L8031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
1982 |
KM416L8031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1983 |
KM416L8031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1984 |
KM44L32031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
1985 |
KM44L32031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1986 |
KM44L32031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1987 |
KM44L32031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
1988 |
KM44L32031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1989 |
KM44L32031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1990 |
KM44S3203BT-G_F8 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). |
Samsung Electronic |
1991 |
KM44S3203BT-G_FA |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). |
Samsung Electronic |
1992 |
KM44S3203BT-G_FH |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). |
Samsung Electronic |
1993 |
KM44S3203BT-G_FL |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). |
Samsung Electronic |
1994 |
KM48L16031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
1995 |
KM48L16031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1996 |
KM48L16031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1997 |
KM48L16031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
1998 |
KM48L16031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
1999 |
KM48L16031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
2000 |
KMM366S1623BT-G8 |
PC100 SDRAM module. 125 MHz, 8 ns speed |
Samsung Electronic |
2001 |
KMM366S1623BT-GH |
PC100 SDRAM module. 100 MHz, 10 ns speed |
Samsung Electronic |
2002 |
KMM366S1623BT-GL |
PC100 SDRAM module. 100 MHz, 10 ns speed |
Samsung Electronic |
2003 |
KT234505 |
Split-dual bipolar transistor module. 100A, 600V. |
Powerex Power Semiconductors |
2004 |
KU80C186EC13 |
16-bit high-integration embedded processor. 13 MHz, 5 V |
Intel |
2005 |
KU80C188EC13 |
16-bit high-integration embedded processor. 13 MHz, 5 V |
Intel |
2006 |
KU80L186EC13 |
16-bit high-integration embedded processor. 13 MHz, 3 V |
Intel |
2007 |
KU80L186EC16 |
16-bit high-integration embedded processor. 16 MHz, 3 V |
Intel |
2008 |
KU80L188EC13 |
16-bit high-integration embedded processor. 13 MHz, 3 V |
Intel |
2009 |
KU80L188EC16 |
16-bit high-integration embedded processor. 16 MHz, 3 V |
Intel |
2010 |
L135 |
T-1 mini-max flashlight lamp. 1.35 volts, 0.315 amps. |
Gilway Technical Lamp |
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