| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
MAX643BCSA |
+15V fixed output, 10W CMOS step-up switching regulator. 10% output accuracy |
MAXIM - Dallas Semiconductor |
| 2102 |
MAX643BC_D |
+15V fixed output, 10W CMOS step-up switching regulator. 10% output accuracy |
MAXIM - Dallas Semiconductor |
| 2103 |
MAX643BEJA |
+15V fixed output, 10W CMOS step-up switching regulator. 10% output accuracy |
MAXIM - Dallas Semiconductor |
| 2104 |
MAX643BEPA |
+15V fixed output, 10W CMOS step-up switching regulator. 10% output accuracy |
MAXIM - Dallas Semiconductor |
| 2105 |
MAX643BESA |
+15V fixed output, 10W CMOS step-up switching regulator. 10% output accuracy |
MAXIM - Dallas Semiconductor |
| 2106 |
MAX643BMJA |
+15V fixed output, 10W CMOS step-up switching regulator. 10% output accuracy |
MAXIM - Dallas Semiconductor |
| 2107 |
MAX744ACPA |
5V, step-down, current-mode PWM DC-DC converter accept inputs between 65V and 16V and deliver 750mA. 159kHz to 212.5kHz guaranteed oscillator frequency limits. |
MAXIM - Dallas Semiconductor |
| 2108 |
MAX850C_D |
Low-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. 100kHz chage-pump switching frequency. Logic-level shutdown mode: 1microA max over temp. |
MAXIM - Dallas Semiconductor |
| 2109 |
MAX870EUK_D |
Switched-capacitor voltage inverter. Input voltage range +1.4V to +5.5V. 0.7mA quiescent current. 125kHz |
MAXIM - Dallas Semiconductor |
| 2110 |
MBR1020 |
Schottky barrier rectifier. 10A, 20V. |
Motorola |
| 2111 |
MC145576EVKAD |
Addendum to MC145576EVK/D Rev. 1.1 ISDN Single-Chip NT1 Transceiver Evaluation Kit |
Motorola |
| 2112 |
MJ100BX100 |
NPN silicon dual tri-state power transistor. 100 A, 1000 V, 700 W. |
Motorola |
| 2113 |
MJ15001 |
Silicon N-P-N power transistor. 140V, 200W. |
General Electric Solid State |
| 2114 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
| 2115 |
MJ4032 |
Darlington PNP silicon power transistor. 100 V, 16 A, 150 W. |
Motorola |
| 2116 |
MJ4035 |
Darlington NPN silicon power transistor. 100 V, 16 A, 150 W. |
Motorola |
| 2117 |
MJE15028 |
50.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2118 |
MJE15029 |
50.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2119 |
MJE15030 |
50.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2120 |
MJE15031 |
50.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 2121 |
MJE243 |
15.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 40 - 180 hFE. Complementary MJE253 |
Continental Device India Limited |
| 2122 |
MJE270 |
15.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 500 hFE. |
Continental Device India Limited |
| 2123 |
MJH6676 |
NPN silicon power transistor. 15 A, 300 V, 125 W. |
Motorola |
| 2124 |
MJH6677 |
NPN silicon power transistor. 15 A, 350 V, 125 W. |
Motorola |
| 2125 |
MJH6678 |
NPN silicon power transistor. 15 A, 400 V, 125 W. |
Motorola |
| 2126 |
MKT 1820 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, Max. temp. 125°C, PCM 10-27.5 |
Vishay |
| 2127 |
MKT 1824 |
C-values 0.01 µF - 1.0 µF, Voltage 40 - 63 VDC, Max. temp. 125°C, High pulse load, Stacked film, SMD |
Vishay |
| 2128 |
MKT 1826 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked film, PCM 5 |
Vishay |
| 2129 |
MKT 1826-E |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked Film, crimped to PCM 10 |
Vishay |
| 2130 |
MM74C150N |
16-Line to 1-Line Multiplexer 3-STATE . 16-Line to 1-Line Multiplexer |
Fairchild Semiconductor |
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