| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
2N1912 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
| 1982 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1983 |
2N1913 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
| 1984 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1985 |
2N1914 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
| 1986 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1987 |
2N1915 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
| 1988 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1989 |
2N1916 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
| 1990 |
2N2023 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1991 |
2N2024 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1992 |
2N2025 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1993 |
2N2026 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1994 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1995 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1996 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1997 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1998 |
2N2303 |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 1999 |
2N2309 |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 2000 |
2N234A |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 2001 |
2N235B |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 2002 |
2N2369-1 |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 2003 |
2N2369B |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 2004 |
2N2369C |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 2005 |
2N2894 |
CASE 22-03, STYLE 1 TO-18(TO-206AA) |
Motorola |
| 2006 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2007 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2008 |
2N3055E |
Silicon epitaxial-base NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 2009 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 2010 |
2N3441 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
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