| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 2102 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2103 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2104 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 2105 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2106 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 2107 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2108 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 2109 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2110 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 2111 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2112 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 2113 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2114 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 2115 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2116 |
2N5204 |
600V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 2117 |
2N5205 |
800V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 2118 |
2N5206 |
1000V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 2119 |
2N5207 |
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 2120 |
2N5208 |
CASE 29-04,STYLE 2 TO-92(TO-226AA) |
Motorola |
| 2121 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2122 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 2123 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 2124 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 2125 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
| 2126 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2127 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2128 |
2N5460 |
CASE 2904, STYLE 7 TO92 (TO226AA) |
Motorola |
| 2129 |
2N5461 |
CASE 2904, STYLE 7 TO92 (TO226AA) |
Motorola |
| 2130 |
2N5462 |
CASE 2904, STYLE 7 TO92 (TO226AA) |
Motorola |
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