| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
2N5872B |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2162 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2163 |
2N5873 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2164 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2165 |
2N5873/1 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2166 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2167 |
2N5873/2 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2168 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2169 |
2N5874 |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
| 2170 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2171 |
2N5874A |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
| 2172 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2173 |
2N5874B |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
| 2174 |
2N5875 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 2175 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2176 |
2N5876 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 2177 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2178 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 2179 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2180 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 2181 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2182 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2183 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2184 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2185 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2186 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2187 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2188 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2189 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2190 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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