No. |
Part Name |
Description |
Manufacturer |
2251 |
2N6286 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6283 |
Silicon Transistor Corporation |
2252 |
2N6287 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6284 |
Silicon Transistor Corporation |
2253 |
2N6288 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
2254 |
2N6290 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
2255 |
2N6292 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
2256 |
2N6294 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6296 |
Silicon Transistor Corporation |
2257 |
2N6295 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6297 |
Silicon Transistor Corporation |
2258 |
2N6296 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6294 |
Silicon Transistor Corporation |
2259 |
2N6297 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6295 |
Silicon Transistor Corporation |
2260 |
2N6298 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6300 |
Silicon Transistor Corporation |
2261 |
2N6299 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6301 |
Silicon Transistor Corporation |
2262 |
2N6300 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6298 |
Silicon Transistor Corporation |
2263 |
2N6301 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6299 |
Silicon Transistor Corporation |
2264 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2265 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2266 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2267 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2268 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
2269 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
2270 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
2271 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
2272 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
2273 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2274 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2275 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
2276 |
2N6439 |
Trans GP BJT NPN 33V 4-Pin Case 316-01 |
New Jersey Semiconductor |
2277 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
2278 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
2279 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
2280 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
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