| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
2N5490 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 2132 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
| 2133 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 2134 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 2135 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2136 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2137 |
2N5555 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA) |
Motorola |
| 2138 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
| 2139 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 2140 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2141 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 2142 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2143 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
| 2144 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
| 2145 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
| 2146 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
| 2147 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 2148 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
| 2149 |
2N5832 |
NPN Transistor Plastic-case Bipolar |
Micro Commercial Components |
| 2150 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2151 |
2N5871 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2152 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2153 |
2N5871/1 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2154 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2155 |
2N5871/2 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2156 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2157 |
2N5872 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2158 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 2159 |
2N5872A |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2160 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
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