| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N6017B |
500 milliwatts glass silicon zener diode, zener voltage 51V |
Motorola |
| 1982 |
1N6018B |
500 milliwatts glass silicon zener diode, zener voltage 56V |
Motorola |
| 1983 |
1N6019B |
500 milliwatts glass silicon zener diode, zener voltage 62V |
Motorola |
| 1984 |
1N6020B |
500 milliwatts glass silicon zener diode, zener voltage 68V |
Motorola |
| 1985 |
1N6021B |
500 milliwatts glass silicon zener diode, zener voltage 75V |
Motorola |
| 1986 |
1N6022B |
500 milliwatts glass silicon zener diode, zener voltage 82V |
Motorola |
| 1987 |
1N6023B |
500 milliwatts glass silicon zener diode, zener voltage 91V |
Motorola |
| 1988 |
1N6024B |
500 milliwatts glass silicon zener diode, zener voltage 100V |
Motorola |
| 1989 |
1N6025B |
500 milliwatts glass silicon zener diode, zener voltage 110V |
Motorola |
| 1990 |
1N6082 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1991 |
1N6083 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1992 |
1N6084 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1993 |
1N6085 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1994 |
1N6086 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1995 |
1N6087 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1996 |
1N6088 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1997 |
1N6089 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1998 |
1N6090 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1999 |
1N6091 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2000 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 2001 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 2002 |
1N941 |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2003 |
1N941A |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2004 |
1N941B |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2005 |
1N942 |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2006 |
1N942A |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2007 |
1N942B |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2008 |
1N943 |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2009 |
1N943A |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
| 2010 |
1N943B |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
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