No. |
Part Name |
Description |
Manufacturer |
2011 |
1N944 |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2012 |
1N944A |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2013 |
1N944B |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2014 |
1N945 |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2015 |
1N945A |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2016 |
1N945B |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2017 |
1N946 |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2018 |
1N946A |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2019 |
1N946B |
Temperature-compesated zener reference diode, RamRod construction |
Motorola |
2020 |
1P1G3157QDBVRQ1 |
Single-Pole, Double-Throw Analog Switch |
Texas Instruments |
2021 |
1P1G3157QDBVRQ1 |
Single-Pole, Double-Throw Analog Switch |
Texas Instruments |
2022 |
1P1G3157QDCKRQ1 |
Single-Pole, Double-Throw Analog Switch |
Texas Instruments |
2023 |
1P1G3157QDCKRQ1 |
Single-Pole, Double-Throw Analog Switch |
Texas Instruments |
2024 |
1S100 |
Diffused silicon rectifier 750mA 100V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
2025 |
1S101 |
Diffused silicon rectifier 750mA 200V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
2026 |
1S103 |
Diffused silicon rectifier 750mA 400V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
2027 |
1S105 |
Diffused silicon rectifier 750mA 600V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
2028 |
1S107 |
Diffused silicon rectifier 750mA 800V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
2029 |
1S109 |
Diffused silicon rectifier 750mA 1000V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
2030 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
2031 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
2032 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
2033 |
1S1420H |
Silicon Triple Diffused Diode, used for Level Shift |
Hitachi Semiconductor |
2034 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
2035 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
2036 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
2037 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
2038 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
2039 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
2040 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
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