DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for EFFECT TR

Datasheets found :: 3508
Page: | 63 | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 |
No. Part Name Description Manufacturer
1981 IFN363 N-Channel silicon junction field-effect transistor InterFET Corporation
1982 IFN421 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
1983 IFN422 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
1984 IFN423 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
1985 IFN424 Dual N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1986 IFN425 Dual N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1987 IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1988 IFN5114 P-Channel silicon junction field-effect transistor InterFET Corporation
1989 IFN5115 P-Channel silicon junction field-effect transistor InterFET Corporation
1990 IFN5116 P-Channel silicon junction field-effect transistor InterFET Corporation
1991 IFN5432 N-Channel silicon junction field-effect transistor InterFET Corporation
1992 IFN5433 N-Channel silicon junction field-effect transistor InterFET Corporation
1993 IFN5434 N-Channel silicon junction field-effect transistor InterFET Corporation
1994 IFN5564 N-Channel dual silicon junction field-effect transistor InterFET Corporation
1995 IFN5565 N-Channel dual silicon junction field-effect transistor InterFET Corporation
1996 IFN5566 N-Channel dual silicon junction field-effect transistor InterFET Corporation
1997 IFN5911 N-Channel dual silicon junction field-effect transistor InterFET Corporation
1998 IFN5912 N-Channel dual silicon junction field-effect transistor InterFET Corporation
1999 IFN6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
2000 IFN6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
2001 IFN860 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
2002 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
2003 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
2004 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
2005 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
2006 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
2007 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
2008 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
2009 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
2010 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State


Datasheets found :: 3508
Page: | 63 | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 |



© 2024 - www Datasheet Catalog com