No. |
Part Name |
Description |
Manufacturer |
1981 |
IFN363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1982 |
IFN421 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1983 |
IFN422 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1984 |
IFN423 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1985 |
IFN424 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1986 |
IFN425 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1987 |
IFN426 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1988 |
IFN5114 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
1989 |
IFN5115 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
1990 |
IFN5116 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
1991 |
IFN5432 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1992 |
IFN5433 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1993 |
IFN5434 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1994 |
IFN5564 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
1995 |
IFN5565 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
1996 |
IFN5566 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
1997 |
IFN5911 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
1998 |
IFN5912 |
N-Channel dual silicon junction field-effect transistor |
InterFET Corporation |
1999 |
IFN6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
2000 |
IFN6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
2001 |
IFN860 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
2002 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
2003 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
2004 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
2005 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
2006 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
2007 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
2008 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
2009 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
2010 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
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