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Datasheets for EFFECT TR

Datasheets found :: 3508
Page: | 67 | 68 | 69 | 70 | 71 | 72 | 73 | 74 | 75 |
No. Part Name Description Manufacturer
2101 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2102 IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
2103 IRF841 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
2104 IRF842 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
2105 IRF843 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
2106 IRF9240SMD 200V Vdss P-Channel FET (field effect transistor) SemeLAB
2107 IRFD213 (IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage Motorola
2108 IRFE230 200V Vdss N-Channel FET (field effect transistor) SemeLAB
2109 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
2110 IRFF110 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
2111 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
2112 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
2113 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
2114 IRFF113 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
2115 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
2116 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
2117 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
2118 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
2119 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
2120 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
2121 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
2122 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
2123 IRFM250D 200V Vdss N-Channel FET (field effect transistor) SemeLAB
2124 IRFR220 N-channel enhancement mode field effect transistor Philips
2125 IRFR9024 P-Channel Enhancement Mode Field Effect Transistor [Obsolete] Fairchild Semiconductor
2126 IRFY240C 200V Vdss N-Channel FET (field effect transistor) SemeLAB
2127 IRFZ42 Power Field Effect Transistors Motorola
2128 J108 N-Channel silicon junction field-effect transistor InterFET Corporation
2129 J109 N-Channel silicon junction field-effect transistor InterFET Corporation
2130 J110 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation


Datasheets found :: 3508
Page: | 67 | 68 | 69 | 70 | 71 | 72 | 73 | 74 | 75 |



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