| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
UPA829TF-T1 |
NPN silicon high frequency transistor. |
NEC |
| 1982 |
UPC1658G |
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER |
NEC |
| 1983 |
UPC1658G-E1 |
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER |
NEC |
| 1984 |
UPC1675B |
General-purpose high frequency wideband amplifier |
NEC |
| 1985 |
UPC1675P |
General-purpose high frequency wideband amplifier |
NEC |
| 1986 |
UPC1678B |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 1987 |
UPC1678G-E2 |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 1988 |
UPC1678P |
Silicon middle-power output high frequency wide-band amplifier |
NEC |
| 1989 |
UPC1694 |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 1990 |
UPC1694GR |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 1991 |
UPC1694GR-E1 |
GENERAL PURPOSE HIGH FREQUENCY WIDEBAND IC FOR FREQUENCY DOWN-CONVERTER |
NEC |
| 1992 |
UPC2776T-E3 |
IC for middle output high frequency wide band amplifier |
NEC |
| 1993 |
UTC2SC1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 1994 |
UX-A5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 1995 |
UX-G5B |
High Frequency High Voltage Rectifier Diodes |
Sanken |
| 1996 |
VFC110 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1997 |
VFC110AG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1998 |
VFC110AG2 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 1999 |
VFC110AP |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2000 |
VFC110APG4 |
High Frequency Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 2001 |
VFC110BG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2002 |
VFC110BG1 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2003 |
VFC110SG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2004 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2005 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2006 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2007 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2008 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2009 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2010 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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