| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2012 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2013 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2014 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2015 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2016 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2017 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2018 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2019 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2020 |
X2N4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2021 |
X2N5484 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2022 |
X2N5485 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2023 |
X2N5486 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2024 |
X2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 2025 |
XP06531 |
For high frequency amplification, oscillation, and mixing |
Panasonic |
| 2026 |
XU308 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2027 |
XU308-10 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2028 |
XU309 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2029 |
XU310 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2030 |
ZTX196 |
High frequency NPN transistor |
FERRANTI |
| 2031 |
ZTX197 |
High frequency NPN transistor |
FERRANTI |
| 2032 |
ZTX320 |
High frequency NPN transistor |
FERRANTI |
| 2033 |
ZTX321 |
High frequency NPN transistor |
FERRANTI |
| 2034 |
ZTX325 |
High frequency NPN transistor |
FERRANTI |
| 2035 |
ZTX326 |
High frequency NPN transistor |
FERRANTI |
| 2036 |
ZTX327 |
High frequency NPN transistor |
FERRANTI |
| | | |
