| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
IRG4RC10 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) |
International Rectifier |
| 1982 |
IRG4RC10 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) |
International Rectifier |
| 1983 |
IRG4RC10 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) |
International Rectifier |
| 1984 |
IRGB420 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A) |
International Rectifier |
| 1985 |
IRGB430 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A) |
International Rectifier |
| 1986 |
IRGBC20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 1987 |
IRGBC20K-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A) |
International Rectifier |
| 1988 |
IRGBC20M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) |
International Rectifier |
| 1989 |
IRGBC20MD2-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) |
International Rectifier |
| 1990 |
IRGBC20SD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A) |
International Rectifier |
| 1991 |
IRGBC30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) |
International Rectifier |
| 1992 |
IRGBC30K-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A) |
International Rectifier |
| 1993 |
IRGBC30M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) |
International Rectifier |
| 1994 |
IRGBC30MD2-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A) |
International Rectifier |
| 1995 |
IRGBC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A) |
International Rectifier |
| 1996 |
IRGBC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) |
International Rectifier |
| 1997 |
IRGBC40M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) |
International Rectifier |
| 1998 |
IRGBF20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
International Rectifier |
| 1999 |
IRGBF30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A) |
International Rectifier |
| 2000 |
IRGPC20U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A) |
International Rectifier |
| 2001 |
IRGPC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) |
International Rectifier |
| 2002 |
IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A) |
International Rectifier |
| 2003 |
IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
International Rectifier |
| 2004 |
IRGPH40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
International Rectifier |
| 2005 |
IRGPH50 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
International Rectifier |
| 2006 |
IRGS30B60 |
INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
| 2007 |
J2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 2008 |
J2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
| 2009 |
J2N3700UB1 |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 2010 |
J2N5401UB1 |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
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