No. |
Part Name |
Description |
Manufacturer |
2101 |
MD708A |
Dual NPN silicon annular transistor |
Motorola |
2102 |
MD708AF |
Dual NPN silicon annular transistor, TO-89 case |
Motorola |
2103 |
MD708B |
Dual NPN silicon annular transistor |
Motorola |
2104 |
MD708BF |
Dual NPN silicon annular transistor, TO-89 case |
Motorola |
2105 |
MD708F |
Dual NPN silicon annular transistor, TO-89 case |
Motorola |
2106 |
MD808 |
Dual NPN silicon annular transistor |
Motorola |
2107 |
MD918 |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
2108 |
MD918A |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
2109 |
MD918AF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
2110 |
MD918B |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
2111 |
MD918BF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
2112 |
MD918F |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
2113 |
MG300Q1US11 |
INSULATED GATE BIPOLAR TRANSISTOR |
TOSHIBA |
2114 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2115 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2116 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2117 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2118 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2119 |
MGP15N60U |
Insulated Gate Bipolar Transistor |
Motorola |
2120 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2121 |
MGP20N60U |
Insulated Gate Bipolar Transistor |
Motorola |
2122 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2123 |
MGP21N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2124 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2125 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2126 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2127 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
2128 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2129 |
MGP7N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2130 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| | | |