| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 2162 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 2163 |
MGY30N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 2164 |
MGY40N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 2165 |
MGY40N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 2166 |
MJ1302A |
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR |
Motorola |
| 2167 |
MJ3202A |
Complementary NPN-PNP silicon power bipolar transistor |
Motorola |
| 2168 |
MJ3281A |
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR |
Motorola |
| 2169 |
MJD31C |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2170 |
MJD31C-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2171 |
MJD31CQ |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2172 |
MJD31CQ-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2173 |
MJD32C |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2174 |
MJD32C-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2175 |
MJD32CQ |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 2176 |
MJL3281A |
Complementary NPN-PNP Silicon Power Bipolar Transistor |
ON Semiconductor |
| 2177 |
MJL3281A-D |
Complementary NPN-PNP Silicon Power Bipolar Transistor |
ON Semiconductor |
| 2178 |
MJW1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 2179 |
MJW3281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 2180 |
MJW3281A-D |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 2181 |
MM018-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 2182 |
MM118-06F |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 2183 |
MM118-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 2184 |
MM118-XX |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 2185 |
MM1748 |
NPN silicon annular transistor designed for ultra-high speed switching applications |
Motorola |
| 2186 |
MM1941 |
NPN silicon annular transistor for high-frequency power oscillator, multiplier and driver applications |
Motorola |
| 2187 |
MM2894 |
PNP silicon annular transistor for low-level, high-speed switching applications |
Motorola |
| 2188 |
MM3724 |
NPN silicon annular transistor |
Motorola |
| 2189 |
MM3725 |
NPN silicon annular transistor, complementary to PNP MM3726 |
Motorola |
| 2190 |
MM3726 |
PNP silicon annular transistor designed for medium-current, complementary NPN MM3725 |
Motorola |
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