No. |
Part Name |
Description |
Manufacturer |
1981 |
K4E170811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1982 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
1983 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
1984 |
K4E170812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1985 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
1986 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
1987 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1988 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
1989 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
1990 |
K4E171612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1991 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
1992 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
1993 |
K4E640412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1994 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
1995 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
1996 |
K4E640812B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1997 |
K4E640812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
1998 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1999 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
2000 |
K4E640812B-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
2001 |
K4E640812B-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
2002 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
2003 |
K4E640812B-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
2004 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
2005 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
2006 |
K4E640812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
2007 |
K4E640812B-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
2008 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
2009 |
K4E640812C |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2010 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
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