No. |
Part Name |
Description |
Manufacturer |
2101 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
2102 |
K4E661612C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2103 |
K4E661612C-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2104 |
K4E661612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2105 |
K4E661612C-60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2106 |
K4E661612C-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2107 |
K4E661612C-L45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2108 |
K4E661612C-L50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2109 |
K4E661612C-L60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2110 |
K4E661612C-T |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2111 |
K4E661612C-T45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2112 |
K4E661612C-T50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2113 |
K4E661612C-T60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2114 |
K4E661612C-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2115 |
K4E661612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2116 |
K4E661612C-TC50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2117 |
K4E661612C-TC60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2118 |
K4E661612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2119 |
K4E661612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2120 |
K4E661612C-TL60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
2121 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
2122 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
2123 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
2124 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
2125 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
2126 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
2127 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
2128 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
2129 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
2130 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
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