No. |
Part Name |
Description |
Manufacturer |
1981 |
2SC1345 |
Transistors>Amplifiers/Bipolar |
Renesas |
1982 |
2SC1345 |
Transistors>Amplifiers/Bipolar |
Renesas |
1983 |
2SC1347 |
Medium Power Amplifiers and Switches |
Unknow |
1984 |
2SC1359 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
1985 |
2SC1377 |
Silicon NPN epitaxial planar transistor, 27MHz, SSB, AM power amplifier applications |
TOSHIBA |
1986 |
2SC1393 |
Transistors TV VHF TUNER RF AMPLIFIER(FORWARD AGC) |
USHA India LTD |
1987 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
1988 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
1989 |
2SC1454 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
1990 |
2SC1506 |
NPN silicon triple diffused transistor, color TV chroma and sound output amplifiers |
NEC |
1991 |
2SC1507 |
NPN silicon triple diffused transistor, color TV chroma and sound output amplifiers |
NEC |
1992 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
1993 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
1994 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
1995 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
1996 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
1997 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
1998 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
1999 |
2SC1623R |
NPN silicon epitaxial transistor, audio frequency and 455kHz IF amplifier |
NEC |
2000 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
2001 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
2002 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
2003 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
2004 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
2005 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
2006 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
2007 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
2008 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
2009 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
2010 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
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