No. |
Part Name |
Description |
Manufacturer |
2011 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
2012 |
2SC1722 |
LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV |
Unknow |
2013 |
2SC1723 |
LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER |
Unknow |
2014 |
2SC1775 |
Transistors>Amplifiers/Bipolar |
Renesas |
2015 |
2SC1775A |
Transistors>Amplifiers/Bipolar |
Renesas |
2016 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
2017 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
2018 |
2SC1788 |
Medium Power Amplifiers and Switches |
Unknow |
2019 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
2020 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
2021 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
2022 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
2023 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
2024 |
2SC1827 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
2025 |
2SC184 |
Transistors AM FREQUENCY CONVERTER IF AMPLIFIER |
USHA India LTD |
2026 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
2027 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
2028 |
2SC1890A |
Transistors>Amplifiers/Bipolar |
Renesas |
2029 |
2SC1906 |
Transistors>Amplifiers/Bipolar |
Renesas |
2030 |
2SC1907 |
Transistors>Amplifiers/Bipolar |
Renesas |
2031 |
2SC1921 |
Transistors>Amplifiers/Bipolar |
Renesas |
2032 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
2033 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
2034 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
2035 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
2036 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
2037 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
2038 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
2039 |
2SC2063 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
2040 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| | | |