| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N5819 |
40 V, 1 A schottky barrier rectifier |
Invac |
| 1982 |
1N5819 |
40 V, 1 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1983 |
1N5819-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 1984 |
1N5819-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 1985 |
1N5819G |
40 V, 1.0 A schottky barrier rectifier diode |
EIC discrete Semiconductors |
| 1986 |
1N5820 |
20 V, 3 A schottky barrier rectifier |
Fagor |
| 1987 |
1N5820 |
20 V, 3 A schottky barrier rectifier |
Invac |
| 1988 |
1N5820 |
20 V, 3 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1989 |
1N5820-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=3A |
Comchip Technology |
| 1990 |
1N5820-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=3A |
Comchip Technology |
| 1991 |
1N5821 |
30 V, 3 A schottky barrier rectifier |
Fagor |
| 1992 |
1N5821 |
30 V, 3 A schottky barrier rectifier |
Invac |
| 1993 |
1N5821 |
30 V, 3 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1994 |
1N5821-G |
Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=3A |
Comchip Technology |
| 1995 |
1N5821-G |
Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=3A |
Comchip Technology |
| 1996 |
1N5822 |
40 V, 3 A schottky barrier rectifier |
Fagor |
| 1997 |
1N5822 |
40 V, 3 A schottky barrier rectifier |
Invac |
| 1998 |
1N5822 |
40 V, 3 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1999 |
1N5822-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=3A |
Comchip Technology |
| 2000 |
1N5822-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=3A |
Comchip Technology |
| 2001 |
1N5926B |
11 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2002 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2003 |
1N5928B |
13 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2004 |
1N5929B |
15 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2005 |
1N5930B |
16 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2006 |
1N5931B |
18 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2007 |
1N5932B |
20 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2008 |
1N5933B |
22 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2009 |
1N5934B |
24 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2010 |
1N5935B |
27 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| | | |
