| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
1N5936B |
30 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2012 |
1N5937B |
33 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2013 |
1N5938B |
36 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2014 |
1N5939B |
39 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2015 |
1N5940B |
43 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2016 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2017 |
1N5942B |
51 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2018 |
1N5943B |
56 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2019 |
1N5944B |
62 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2020 |
1N5945B |
68 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2021 |
1N5946B |
75 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2022 |
1N5947B |
82 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2023 |
1N5948B |
91 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2024 |
1N5949B |
100 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2025 |
1N5950B |
110 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2026 |
1N5951B |
120 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2027 |
1N5952B |
130 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2028 |
1N5953B |
150 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2029 |
1N5954B |
160 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2030 |
1N5955B |
180 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2031 |
1N5956B |
200 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2032 |
1N616 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2033 |
1N617 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2034 |
1N618 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2035 |
1N625 |
20 V, 500 mW general purpose diode |
BKC International Electronics |
| 2036 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 2037 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
| 2038 |
1N6267 |
6.8 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 2039 |
1N6267A |
6.8 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 2040 |
1N6267C |
6.8 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
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