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Datasheets found :: 4161
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1981 | IDT6116SA55TP | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1982 | IDT6116SA55TPB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1983 | IDT6116SA55Y | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1984 | IDT6116SA55YB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1985 | IDT6116SA70D | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1986 | IDT6116SA70DB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1987 | IDT6116SA70P | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1988 | IDT6116SA70PB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1989 | IDT6116SA70SO | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1990 | IDT6116SA70SOB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1991 | IDT6116SA70TD | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1992 | IDT6116SA70TDB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1993 | IDT6116SA70TP | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1994 | IDT6116SA70TPB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1995 | IDT6116SA70Y | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1996 | IDT6116SA70YB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1997 | IDT6116SA90D | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1998 | IDT6116SA90DB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 1999 | IDT6116SA90P | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2000 | IDT6116SA90PB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2001 | IDT6116SA90SO | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2002 | IDT6116SA90SOB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2003 | IDT6116SA90TD | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2004 | IDT6116SA90TDB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2005 | IDT6116SA90TP | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2006 | IDT6116SA90TPB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2007 | IDT6116SA90Y | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2008 | IDT6116SA90YB | CMOS STATIC RAM 16K (2K x 8 BIT) | IDT |
| 2009 | K4E160811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic |
| 2010 | K4E160811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic |
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Datasheets found :: 4161
|