No. |
Part Name |
Description |
Manufacturer |
2011 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
2012 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
2013 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
2014 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
2015 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
2016 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
2017 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
2018 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
2019 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
2020 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
2021 |
K4F170811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
2022 |
K4F170811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
2023 |
K4F170812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
2024 |
K4F170812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
2025 |
K6E0808C1E |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2026 |
K6E0808C1E-C |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2027 |
K6E0808C1E-C10 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2028 |
K6E0808C1E-C12 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2029 |
K6E0808C1E-C15 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2030 |
K6E0808C1E-I |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2031 |
K6E0808C1E-I10 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2032 |
K6E0808C1E-I12 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2033 |
K6E0808C1E-I15 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2034 |
K6E0808C1E-L |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2035 |
K6E0808C1E-P |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
2036 |
K6F4008U2E |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
2037 |
K6F4008U2E-EF55 |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
2038 |
K6F4008U2E-EF70 |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
2039 |
K6F4008U2E-F |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
2040 |
K6F4008U2G |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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