| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
MCR82-60 |
THYRISTOR 80 AMPERES RMS, 600 VOLTS |
Motorola |
| 2102 |
MCT210 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2103 |
MCT210 |
6V, 60mA optically coupled isolator phototransistor output |
ISOCOM |
| 2104 |
MCT2200 |
3 V, 60 mA 20 us phototransistor optocoupler |
General Instruments |
| 2105 |
MCT2201 |
3 V, 60 mA 10 us phototransistor optocoupler |
General Instruments |
| 2106 |
MCT2202 |
3 V, 60 mA 10 us phototransistor optocoupler |
General Instruments |
| 2107 |
MCT271 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2108 |
MCT272 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2109 |
MCT274 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2110 |
MCT275 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2111 |
MCT276 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2112 |
MCT277 |
3 V, 60 mA phototransistor optocoupler |
General Instruments |
| 2113 |
MCTA75P60E118 |
75A, 600V P-Type MOS Controlled Thyristor |
Intersil |
| 2114 |
MDB6S |
1A, 600V, MicroDIP, Single-Phase Bridge Rectifier |
Fairchild Semiconductor |
| 2115 |
MG100H2YL1 |
NPN transistor for high power switching and notor control applications, 600V, 100A |
Westcode Semiconductors |
| 2116 |
MHW4524F |
450 MHz CATV HYBRID AMPLIFIER, 24db Gain, 60-channel CATV feedforward amplifier |
Motorola |
| 2117 |
MHW5272A |
450 MHz CATV amplifier module, 27dB gain, 60-channel CATV line extender amplifiers |
Motorola |
| 2118 |
MHW5332A |
450 MHz CATV amplifier module, 33dB gain, 60-channel CATV line extender amplifiers |
Motorola |
| 2119 |
MMBF170L |
Power MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
| 2120 |
MMBF170LT1 |
Power MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
| 2121 |
MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23 |
ON Semiconductor |
| 2122 |
MMBF170LT1G |
Power MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
| 2123 |
MMBF170LT3 |
Power MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
| 2124 |
MMBF170LT3G |
Power MOSFET 500 mAmps, 60 Volts |
ON Semiconductor |
| 2125 |
MMBT2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2126 |
MMBT2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2127 |
MMBT5550 |
160 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2128 |
MMDF3N06HD |
OBSOLETE - Power MOSFET 3 Amps, 60 Volts |
ON Semiconductor |
| 2129 |
MMDF3N06HD-D |
Power MOSFET 3 Amps, 60 Volts N-Channel SO-8, Dual |
ON Semiconductor |
| 2130 |
MMDF3N06VL |
Power MOSFET 3 Amps, 60 Volts |
ON Semiconductor |
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