No. |
Part Name |
Description |
Manufacturer |
2161 |
MPS2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2162 |
MPS3702 |
40 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2163 |
MPS3703 |
50 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2164 |
MPS3704 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2165 |
MPS3705 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2166 |
MPS3706 |
40 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2167 |
MPS6531 |
Planar passivated epitaxial NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
2168 |
MPS6532 |
Planar passivated epitaxial NPN silicon transistor. 30V, 600mA. |
General Electric Solid State |
2169 |
MR2406 |
24A, 600V ultra fast recovery rectifier |
MCC |
2170 |
MR2406FR |
24A, 600V ultra fast recovery rectifier |
MCC |
2171 |
MR756 |
6.0A, 600V ultra fast recovery rectifier |
MCC |
2172 |
MR816 |
Fast recovery silicon rectifier, 600V 0.75A |
Motorola |
2173 |
MR846 |
Fast recovery silicon rectifier, 600V 3A |
Motorola |
2174 |
MR886 |
Fast recovery silicon rectifier, 600V 12A |
Motorola |
2175 |
MR896 |
Fast recovery silicon rectifier, 600V 30A |
Motorola |
2176 |
MRF18060A |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
2177 |
MRF18060ALSR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
2178 |
MRF18060AR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
2179 |
MRF18060ASR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
2180 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
2181 |
MRF18060BLSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
2182 |
MRF18060BR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
2183 |
MRF18060BSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
2184 |
MRF184_D |
MRF184R1, MRF184SR1 1 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET |
Motorola |
2185 |
MRF19060 |
MRF19060, MRF19060R3, MRF19060SR3 1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
2186 |
MRF19060R3 |
1990 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
2187 |
MRF19060SR3 |
1990 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
2188 |
MRF20060R_D |
MRF20060R, MRF20060RS 2 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistors - Archived |
Motorola |
2189 |
MRF21060 |
MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
2190 |
MRF21060R3 |
2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
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