| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
3584JM |
High Voltage, High Speed OPERATIONAL AMPLIFIER |
Burr Brown |
| 2102 |
35P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 2103 |
36P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 2104 |
3712R |
High Sensitivity - Low Speed Fiber Optic Transmitter and Receiver |
Burr Brown |
| 2105 |
3712T |
High Sensitivity - Low Speed Fiber Optic Transmitter and Receiver |
Burr Brown |
| 2106 |
3713R |
High Sensitivity - Medium Speed Fiber Optic Transmitter and Receiver |
Burr Brown |
| 2107 |
3713T |
High Sensitivity - Medium Speed Fiber Optic Transmitter and Receiver |
Burr Brown |
| 2108 |
37P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 2109 |
3BH41 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2110 |
3DS16-325 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 2111 |
3DS16-325SC-15 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 2112 |
3DS16-325SC-20 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 2113 |
3DS16-325SI-15 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 2114 |
3DS16-325SI-20 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 2115 |
3FWJ42N |
SCHOTTKY BARRIER DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2116 |
3GWJ42 |
SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2117 |
3GWJ42C |
N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2118 |
3JU41 |
SILICON DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2119 |
3LN01M |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2120 |
3LN01S |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2121 |
3LP01C |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2122 |
485ELC |
Max voltage:20V; 250mA; high speed ethernet data line protector. For ethernet- 10/100 base T, catagory 5 systems, RS-485 serial communication lines, ISDN equipment/systems, video transmission systems |
Protek Devices |
| 2123 |
4AK19 |
Silicon N Channel MOSFET High Speed Power Switching |
Hitachi Semiconductor |
| 2124 |
4AK27 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 2125 |
500EXH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2126 |
500YKH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2127 |
50FXFG13 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2128 |
50FXFH13 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 2129 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2130 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
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