No. |
Part Name |
Description |
Manufacturer |
2131 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
2132 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
2133 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
2134 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
2135 |
54F161A |
Synchronous Presettable Binary Counter, are high-speed version of the 54F161 |
Fairchild Semiconductor |
2136 |
54F163A |
Synchronous Presettable Binary Counter, are high-speed version of the 54F163 |
Fairchild Semiconductor |
2137 |
54H183 |
DUAL HIGH SPEED ADDER |
Fairchild Semiconductor |
2138 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
2139 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
2140 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
2141 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
2142 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
2143 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
2144 |
5962-0051401Q2A |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
2145 |
5962-0051401QEA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
2146 |
5962-0051401QPA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
2147 |
5962-0051401V2A |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
2148 |
5962-0051401VEA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
2149 |
5962-0051401VPA |
Non-Inverting High Speed Power Drivers |
Texas Instruments |
2150 |
5962-0151201VPA |
Inverting High-Speed MOSFET Drivers |
Texas Instruments |
2151 |
5962-0724801VFA |
High-Speed Differential Receiver 16-CFP -55 to 125 |
Texas Instruments |
2152 |
5962-7802301MEA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2153 |
5962-7802301MEA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2154 |
5962-7802301MEA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2155 |
5962-7802301MFA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2156 |
5962-7802301MFA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2157 |
5962-7802301MFA |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2158 |
5962-7802301Q2A |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2159 |
5962-7802301Q2A |
Quad High Speed Differential Line Drivers |
National Semiconductor |
2160 |
5962-7802301Q2A |
Quad High Speed Differential Line Drivers |
National Semiconductor |
| | | |