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Datasheets for PEED

Datasheets found :: 37509
Page: | 68 | 69 | 70 | 71 | 72 | 73 | 74 | 75 | 76 |
No. Part Name Description Manufacturer
2131 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
2132 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
2133 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
2134 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
2135 54F161A Synchronous Presettable Binary Counter, are high-speed version of the 54F161 Fairchild Semiconductor
2136 54F163A Synchronous Presettable Binary Counter, are high-speed version of the 54F163 Fairchild Semiconductor
2137 54H183 DUAL HIGH SPEED ADDER Fairchild Semiconductor
2138 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
2139 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
2140 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
2141 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
2142 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
2143 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
2144 5962-0051401Q2A Non-Inverting High Speed Power Drivers Texas Instruments
2145 5962-0051401QEA Non-Inverting High Speed Power Drivers Texas Instruments
2146 5962-0051401QPA Non-Inverting High Speed Power Drivers Texas Instruments
2147 5962-0051401V2A Non-Inverting High Speed Power Drivers Texas Instruments
2148 5962-0051401VEA Non-Inverting High Speed Power Drivers Texas Instruments
2149 5962-0051401VPA Non-Inverting High Speed Power Drivers Texas Instruments
2150 5962-0151201VPA Inverting High-Speed MOSFET Drivers Texas Instruments
2151 5962-0724801VFA High-Speed Differential Receiver 16-CFP -55 to 125 Texas Instruments
2152 5962-7802301MEA Quad High Speed Differential Line Drivers National Semiconductor
2153 5962-7802301MEA Quad High Speed Differential Line Drivers National Semiconductor
2154 5962-7802301MEA Quad High Speed Differential Line Drivers National Semiconductor
2155 5962-7802301MFA Quad High Speed Differential Line Drivers National Semiconductor
2156 5962-7802301MFA Quad High Speed Differential Line Drivers National Semiconductor
2157 5962-7802301MFA Quad High Speed Differential Line Drivers National Semiconductor
2158 5962-7802301Q2A Quad High Speed Differential Line Drivers National Semiconductor
2159 5962-7802301Q2A Quad High Speed Differential Line Drivers National Semiconductor
2160 5962-7802301Q2A Quad High Speed Differential Line Drivers National Semiconductor


Datasheets found :: 37509
Page: | 68 | 69 | 70 | 71 | 72 | 73 | 74 | 75 | 76 |



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