No. |
Part Name |
Description |
Manufacturer |
2101 |
2SC2609 |
NPN epitaxial planar RF power VHF transistor 100W 28V |
Mitsubishi Electric Corporation |
2102 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
2103 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
2104 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
2105 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
2106 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2107 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
2108 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
2109 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
2110 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
2111 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
2112 |
2SC2671H |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
2113 |
2SC2690 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
2114 |
2SC2690A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
2115 |
2SC2694 |
NPN Epitaxial Planar Type |
Mitsubishi Electric Corporation |
2116 |
2SC2703 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
2117 |
2SC2704 |
Silicon NPN epitaxial audio frequency transistor, complementary to 2SA1144 |
TOSHIBA |
2118 |
2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
2119 |
2SC2706 |
Silicon NPN epitaxial audio frequency power transistor, complementary to 2SA1146 |
TOSHIBA |
2120 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
2121 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
2122 |
2SC2713 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
2123 |
2SC2714 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications |
TOSHIBA |
2124 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
2125 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
2126 |
2SC2717 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
2127 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
2128 |
2SC2754 |
Silicon NPN epitaxial type transistor (PCT Process) |
TOSHIBA |
2129 |
2SC2756 |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
2130 |
2SC2756R |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
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