| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 2162 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 2163 |
2SC2881 |
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 2164 |
2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 2165 |
2SC2883 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2166 |
2SC2884 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2167 |
2SC288A(I*B) |
2SC288A(I·B) NPN silicon epitaxial transistor DISK MOLD for UHF oscillator |
NEC |
| 2168 |
2SC2904 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2169 |
2SC2905 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2170 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
| 2171 |
2SC2910 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
| 2172 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 2173 |
2SC2922 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 2174 |
2SC2932 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2175 |
2SC2933 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2176 |
2SC2946 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 2177 |
2SC29461 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 2178 |
2SC2954 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 2179 |
2SC2960 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
| 2180 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 2181 |
2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 2182 |
2SC2986 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2183 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 2184 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 2185 |
2SC2999 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 2186 |
2SC3000 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 2187 |
2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2188 |
2SC3007 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 2189 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2190 |
2SC3017 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| | | |
