| No. |
Part Name |
Description |
Manufacturer |
| 211 |
AS7C31024A-15TJI |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 212 |
AS7C31024A-20JC |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 213 |
AS7C31024A-20JI |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 214 |
AS7C31024A-20TC |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 215 |
AS7C31024A-20TI |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 216 |
AS7C31024A-20TJC |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 217 |
AS7C31024A-20TJI |
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) |
Alliance Semiconductor |
| 218 |
AT697E |
The AT697E is a highly-integrated, high-performance 32-bit RISC embedded processor implementing the SPARC architecture V8 specification. The implementation is based on the European Space Agency (ESA) LEON2 fault tolerant model. |
Atmel |
| 219 |
AT91SAM7A1 |
The AT91SAM7A1 features a 36 MIPS ARM7TDMI processor with 4K bytes of SRAM, fully programmable External Bus Interface (EBI) and a ... |
Atmel |
| 220 |
AT91SAM7A2 |
The AT91SAM7A2 features a 27 MIPS ARM7TDMI processor with 16K bytes of SRAM, fully programmable External Bus Interface (EBI) and ... |
Atmel |
| 221 |
ATDH2200E |
FPGA configurator programming Kit (enhanced). |
Atmel |
| 222 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 223 |
BB833 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
| 224 |
BB835 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 225 |
BB837 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 226 |
BBY24 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 227 |
BBY25 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 228 |
BBY26 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 229 |
BBY27 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 230 |
BBY32CB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 231 |
BBY32DA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 232 |
BBY32DB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 233 |
BBY32EA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 234 |
BBY32FA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 235 |
BBY55-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 236 |
BBY55-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 237 |
BBY56-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 238 |
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 239 |
BBY57-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
Siemens |
| 240 |
BBY57-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
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