No. |
Part Name |
Description |
Manufacturer |
241 |
BBY58-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
242 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
243 |
BC264 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
244 |
BC264A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
245 |
BC264B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
246 |
BC264C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
247 |
BC264D |
N channel field effect transistor (epoxy can) |
SESCOSEM |
248 |
BF245 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
249 |
BF245A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
250 |
BF245B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
251 |
BF245C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
252 |
BF247 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
253 |
BF247A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
254 |
BF247B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
255 |
BF247C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
256 |
BF775 |
NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) |
Siemens |
257 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
258 |
BF775W |
NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) |
Siemens |
259 |
BXY22G |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
260 |
BXY22H |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
261 |
BXY22J |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
262 |
BXY23 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
263 |
CAT3211 |
I2C Programmable Haptic Driver for Rotary (ERM) DC Motors |
ON Semiconductor |
264 |
CAT93C56 (E) |
2-kb, 1 MHz @ 4.5 V, 500 kHz @ 2.5 V, 250 kHz @ 1.8 V, Die Rev E |
Catalyst Semiconductor |
265 |
CAT93C57 (E) |
2-kb, 1 MHz @ 4.5 V, 500 kHz @ 2.5 V, 250 kHz @ 1.8 V, Die Rev E |
Catalyst Semiconductor |
266 |
CAT93C66 (E) |
4-kb, 1 MHz @ 4.5 V, 500 kHz @ 2.5 V, 250 kHz @ 1.8 V, Die Rev E |
Catalyst Semiconductor |
267 |
CC2560-PAN1315 |
Bluetooth v2.1 + EDR (Enhanced Data Rate) Transceiver |
Texas Instruments |
268 |
CGD15FB45P1 |
Gate driver board (engineering solution) |
Wolfspeed |
269 |
CGD15HB62LP |
Gate driver board (engineering solution*) |
Wolfspeed |
270 |
CGD15HB62P1 |
Gate driver board (engineering solution) |
Wolfspeed |
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