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Datasheets for (E

Datasheets found :: 7796
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No. Part Name Description Manufacturer
241 BBY58-02W Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Siemens
242 BBY58-03W Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Siemens
243 BC264 N channel field effect transistor (epoxy can) SESCOSEM
244 BC264A N channel field effect transistor (epoxy can) SESCOSEM
245 BC264B N channel field effect transistor (epoxy can) SESCOSEM
246 BC264C N channel field effect transistor (epoxy can) SESCOSEM
247 BC264D N channel field effect transistor (epoxy can) SESCOSEM
248 BF245 N channel field effect transistor (epoxy can) SESCOSEM
249 BF245A N channel field effect transistor (epoxy can) SESCOSEM
250 BF245B N channel field effect transistor (epoxy can) SESCOSEM
251 BF245C N channel field effect transistor (epoxy can) SESCOSEM
252 BF247 N channel field effect transistor (epoxy can) SESCOSEM
253 BF247A N channel field effect transistor (epoxy can) SESCOSEM
254 BF247B N channel field effect transistor (epoxy can) SESCOSEM
255 BF247C N channel field effect transistor (epoxy can) SESCOSEM
256 BF775 NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) Siemens
257 BF775A NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) Siemens
258 BF775W NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) Siemens
259 BXY22G Junction varactors for use in the GHz range (e.g. modulation and tuning) Siemens
260 BXY22H Junction varactors for use in the GHz range (e.g. modulation and tuning) Siemens
261 BXY22J Junction varactors for use in the GHz range (e.g. modulation and tuning) Siemens
262 BXY23 Junction varactors for use in the GHz range (e.g. modulation and tuning) Siemens
263 CAT3211 I2C Programmable Haptic Driver for Rotary (ERM) DC Motors ON Semiconductor
264 CAT93C56 (E) 2-kb, 1 MHz @ 4.5 V, 500 kHz @ 2.5 V, 250 kHz @ 1.8 V, Die Rev E Catalyst Semiconductor
265 CAT93C57 (E) 2-kb, 1 MHz @ 4.5 V, 500 kHz @ 2.5 V, 250 kHz @ 1.8 V, Die Rev E Catalyst Semiconductor
266 CAT93C66 (E) 4-kb, 1 MHz @ 4.5 V, 500 kHz @ 2.5 V, 250 kHz @ 1.8 V, Die Rev E Catalyst Semiconductor
267 CC2560-PAN1315 Bluetooth v2.1 + EDR (Enhanced Data Rate) Transceiver Texas Instruments
268 CGD15FB45P1 Gate driver board (engineering solution) Wolfspeed
269 CGD15HB62LP Gate driver board (engineering solution*) Wolfspeed
270 CGD15HB62P1 Gate driver board (engineering solution) Wolfspeed


Datasheets found :: 7796
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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