| No. |
Part Name |
Description |
Manufacturer |
| 211 |
DGS3-018AS |
Gallium arsenide schottky rectifier, 180V, 7A |
IXYS |
| 212 |
DTZ180 |
V(br): 180V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
| 213 |
DTZ180A |
V(br): 180V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
| 214 |
M57182N-416 |
Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 180V-450V. Output specifications 16V, 300mA. |
Isahaya Electronics Corporation |
| 215 |
MIC4827 |
Low Input Voltage, 180VPP Output Voltage, EL Driver |
Micrel Semiconductor |
| 216 |
MIC4827BMM |
Low Input Voltage/ 180VPP Output Voltage/ EL Driver |
Micrel Semiconductor |
| 217 |
MMBD1501 |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 218 |
MMBD1501A |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 219 |
MMBD1503 |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 220 |
MMBD1503A |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 221 |
MMBD1504 |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 222 |
MMBD1504A |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 223 |
MMBD1505 |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 224 |
MMBD1505A |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 225 |
MTM5N18 |
N-CHANNEL TMOS POWER FET 5A 180V 1.0 ohms |
Motorola |
| 226 |
MTM8N18 |
N-CHANNEL TMOS POWER FET 8A 180V 0.4 ohms |
Motorola |
| 227 |
MTP12N18 |
Trans MOSFET N-CH 180V 12A |
New Jersey Semiconductor |
| 228 |
MTP2N18 |
Trans MOSFET N-CH 180V 3.25A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 229 |
MTP5N18 |
N-CHANNEL TMOS POWER FET 5A 180V 1.0 ohms |
Motorola |
| 230 |
MTP8N18 |
N-CHANNEL TMOS POWER FET 8A 180V 0.4 ohms |
Motorola |
| 231 |
NTE5103A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Zener test current Izt = 1.4mA. |
NTE Electronics |
| 232 |
NTE5164A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Test current Izt = 5mA. |
NTE Electronics |
| 233 |
NTE5230A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Zener test current Izt = 14mA. |
NTE Electronics |
| 234 |
P6SMB180 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 180V. 600W peak power, 3.0W steady state. |
Motorola |
| 235 |
P6SMB180A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 180V. 600W peak power, 3.0W steady state. |
Motorola |
| 236 |
PFZ180 |
V(br): 180V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
| 237 |
PFZ180A |
V(br): 180V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
| 238 |
PL180Z |
1W 180V Voltage Regulator Diode |
IPRS Baneasa |
| 239 |
R15KP180 |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 240 |
R15KP180A |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
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