| No. |
Part Name |
Description |
Manufacturer |
| 241 |
R15KP180C |
Diode TVS Single Bi-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 242 |
R15KP180CA |
Diode TVS Single Bi-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 243 |
R15KP18A |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 244 |
R15KP18C |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 245 |
R15KP18CA |
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 246 |
RD180EB |
0.5W DHD zener diode, 180V |
NEC |
| 247 |
RFK25N18 |
25A/ 180V and 200V/ 0.150 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 248 |
RFK25N20 |
25A/ 180V and 200V/ 0.150 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 249 |
RFL1N18 |
1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 250 |
RFL1N18 |
1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 251 |
RFL1N18L |
1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 252 |
RFL1N20 |
1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 253 |
RFM12N18 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 254 |
RFM12N20 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 255 |
RFP12N18 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 256 |
RFP12N18 |
Trans MOSFET N-CH 180V 12A 3-Pin TO-220AB |
New Jersey Semiconductor |
| 257 |
RFP12N20 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 258 |
SB05-18M |
Schottky Barrier Diode 180V, 500mA Rectifier |
SANYO |
| 259 |
SB05-18V |
Schottky Barrier Diode 180V, 500mA Rectifier |
SANYO |
| 260 |
SB10-18K |
Schottky Barrier Diode (Twin Type � Cathode Common) 180V, 1A Rectifier |
SANYO |
| 261 |
SB30-18 |
Schottky Barrier Diode (Twin Type � Cathod Common) 180V, 3A Rectifier |
SANYO |
| 262 |
SB50-18 |
Schottky Barrier Diode (Twin Type � Cathode Common) 180V, 5A Rectifier |
SANYO |
| 263 |
SB50-18K |
Schottky Barrier Diode (Twin Type � Cathode Common) 180V, 5A Rectifier |
SANYO |
| 264 |
SB80-18 |
Schottky Barrier Diode (Twin Type � Cathode Common) 180V, 8A Rectifier |
SANYO |
| 265 |
SBA120-18J |
Schottky Barrier Diode (Twin Type � Cathode Common) 180V, 12A Rectifier |
SANYO |
| 266 |
T10A180B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 162V,max. Ir = 50uA @ Vr = 180V,max, Bulk (500pcs). |
Littelfuse |
| 267 |
T10A180T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 162V,max. Ir = 50uA @ Vr = 180V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 268 |
T10A200B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). |
Littelfuse |
| 269 |
T10A200T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 270 |
T10C180BF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 170V,max. Vbr = 180V,min @ 1uA, Holding carrent Ih = 120mA,th min. |
Littelfuse |
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