No. |
Part Name |
Description |
Manufacturer |
211 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
212 |
2N3954 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
213 |
2N3954A |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
214 |
2N3955 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
215 |
2N3956 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
216 |
2N3958 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
217 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
218 |
2N4013 |
Silicon Planar High Current core drivers - PNP Transistor |
Transitron Electronic |
219 |
2N4014 |
Silicon Planar High Current core drivers - PNP Transistor |
Transitron Electronic |
220 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
221 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
222 |
2N4234 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
223 |
2N4235 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
224 |
2N4236 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
225 |
2N4409 |
NPN neon display tube driver. |
Fairchild Semiconductor |
226 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
227 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
228 |
2N4427 |
Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits |
AEG-TELEFUNKEN |
229 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
230 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
231 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
232 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
233 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
234 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
235 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
236 |
2N5447 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
237 |
2N5448 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
238 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
239 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
240 |
2N5861 |
NPN silicon memory driver transistor |
Motorola |
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