| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 242 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 243 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 244 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 245 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 246 |
2SA100 |
Ge PNP Drift |
Unknow |
| 247 |
2SA101 |
Ge PNP Drift |
Unknow |
| 248 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 249 |
2SA102 |
Ge PNP Drift |
Unknow |
| 250 |
2SA103 |
Ge PNP Drift |
Unknow |
| 251 |
2SA1036KFRA |
PNP Driver Transistor (Corresponds to AEC-Q101) |
ROHM |
| 252 |
2SA1036KFRAT146 |
PNP Driver Transistor (Corresponds to AEC-Q101) |
ROHM |
| 253 |
2SA1036KT146 |
PNP Driver Transistor |
ROHM |
| 254 |
2SA104 |
Ge PNP Drift |
Unknow |
| 255 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 256 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 257 |
2SA1225 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 258 |
2SA1258 |
60V/3A for High-Speed Drivers Applications |
SANYO |
| 259 |
2SA1259 |
60V/5A for High-Speed Drivers Applications |
SANYO |
| 260 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 261 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 262 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 263 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 264 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 265 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 266 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 267 |
2SA1425 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 268 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
| 269 |
2SA1450 |
PNP Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications |
SANYO |
| 270 |
2SA1479 |
PNP Bipolar Transistor for CRT, Video Output Driver Applications |
ON Semiconductor |
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