| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2211-500D |
data delay devices |
Data Delay Devices Inc |
| 212 |
2211-500G |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 213 |
2211-500G |
data delay devices |
Data Delay Devices Inc |
| 214 |
2211-50A |
data delay devices |
Data Delay Devices Inc |
| 215 |
2211-50A |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 216 |
2211-50B |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 217 |
2211-50B |
data delay devices |
Data Delay Devices Inc |
| 218 |
2211-50D |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 219 |
2211-50D |
data delay devices |
Data Delay Devices Inc |
| 220 |
2214-500C |
data delay devices |
Data Delay Devices Inc |
| 221 |
2214-500C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 222 |
2214-500D |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 223 |
2214-500D |
data delay devices |
Data Delay Devices Inc |
| 224 |
2214-500G |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 225 |
2214-500G |
data delay devices |
Data Delay Devices Inc |
| 226 |
2214-50A |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 227 |
2214-50A |
data delay devices |
Data Delay Devices Inc |
| 228 |
2214-50B |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 229 |
2214-50B |
data delay devices |
Data Delay Devices Inc |
| 230 |
2214-50D |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 231 |
2214-50D |
data delay devices |
Data Delay Devices Inc |
| 232 |
2729GN-500 |
GaN Transistors |
Microsemi |
| 233 |
2729GN-500V |
|
Microsemi |
| 234 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 235 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 236 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 237 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 238 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
| 239 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
| 240 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| | | |
