| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 242 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 243 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 244 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 245 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 246 |
2SA1576UBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 247 |
2SA1576UBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 248 |
2SA1774EBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 249 |
2SA1774EBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 250 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 251 |
2SA2126 |
Bipolar Transistor -50V -3A VCE(sat);-270mV max. PNP Single TP/TP-FA |
ON Semiconductor |
| 252 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 253 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 254 |
2SAR513P5 |
PNP -50V -1A Medium Power Transistor |
ROHM |
| 255 |
2SAR513P5T100 |
PNP -50V -1A Medium Power Transistor |
ROHM |
| 256 |
2SAR533P5 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 257 |
2SAR533P5T100 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 258 |
2SAR553P5 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 259 |
2SAR553P5T100 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 260 |
2SAR554P5 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 261 |
2SAR554P5T100 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 262 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 263 |
2SB1122 |
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 264 |
2SB1204 |
Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA |
ON Semiconductor |
| 265 |
2SB1566 |
Power Transistor (-50V/ -3A) |
ROHM |
| 266 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
| 267 |
2SD2395 |
Power Transistor (-50V/ -3A) |
ROHM |
| 268 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 269 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 270 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
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