| No. |
Part Name |
Description |
Manufacturer |
| 211 |
APT5018BFLL |
POWER MOS 7 500V 27A 0.180 Ohm |
Advanced Power Technology |
| 212 |
APT5018BFLLG |
FREDFETs |
Microsemi |
| 213 |
APT5018BLL |
POWER MOS 7 500V 27A 0.180 Ohm |
Advanced Power Technology |
| 214 |
APT5018BLLG |
MOSFET |
Microsemi |
| 215 |
APT5018SFLL |
POWER MOS 7 500V 27A 0.180 Ohm |
Advanced Power Technology |
| 216 |
APT5018SFLLG |
FREDFETs |
Microsemi |
| 217 |
APT5018SLL |
POWER MOS 7 500V 27A 0.180 Ohm |
Advanced Power Technology |
| 218 |
APT5018SLLG |
MOSFET |
Microsemi |
| 219 |
APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm |
Advanced Power Technology |
| 220 |
APT8018 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 221 |
APT8018JN |
POWER MOS IV 800V 40A 0.18 Ohm |
Advanced Power Technology |
| 222 |
APT8018L2VFR |
MOSFET |
Advanced Power Technology |
| 223 |
APT8018L2VFRG |
FREDFETs |
Microsemi |
| 224 |
APT8018L2VR |
POWER MOS V 800V 43A 0.180 Ohm |
Advanced Power Technology |
| 225 |
APT8018L2VRG |
MOSFET |
Microsemi |
| 226 |
ASZ1018 |
Germanium PNP Power Switching Transistor |
TUNGSRAM |
| 227 |
ATF-50189 |
ATF-50189 · Single Voltage E-pHEMT Low Noise +45 dBm OIP3 in SOT-89 package |
Agilent (Hewlett-Packard) |
| 228 |
ATF-50189 |
ATF-50189 · Single Voltage E-pHEMT Low Noise +45 dBm OIP3 in SOT-89 package |
Agilent (Hewlett-Packard) |
| 229 |
AUIRF1018ES |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 230 |
AUIRF1018ESTRR |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 231 |
AUIRFR1018E |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 232 |
AUIRFR1018ETRR |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 233 |
BGA3018 |
1 GHz 18 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 234 |
BM1R00018F |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
| 235 |
BM1R00018F-E2 |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
| 236 |
BQ2018 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 237 |
BQ2018SN |
Power Minder IC |
Texas Instruments |
| 238 |
BQ2018SN-E1 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 239 |
BQ2018SN-E1TR |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 240 |
BQ2018TS |
Power Minder IC |
Texas Instruments |
| | | |
