| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BQ2018SN |
Power Minder IC |
Texas Instruments |
| 242 |
BQ2018SN-E1 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 243 |
BQ2018SN-E1TR |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 244 |
BQ2018TS |
Power Minder IC |
Texas Instruments |
| 245 |
BQ2018TS-E1 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 246 |
BQ2018TS-E1TR |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
| 247 |
BQ2018TS-E1TRG4 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) 8-TSSOP -20 to 70 |
Texas Instruments |
| 248 |
BQ2114LB-018 |
GAS GAUGE MODULE WITH LEDS AND SWITCH (L-VERSION) BQ2014 BASED |
Texas Instruments |
| 249 |
BQ2118MODULE |
POWER MINDER MINI-BOARD EVALUATI MODULE, BQ2018 BASED |
Texas Instruments |
| 250 |
BQ219XLB-018 |
Smart battery gas gauge module with LEDs and switch, BQ2092 or BQ2040 based |
Texas Instruments |
| 251 |
BQ24018 |
Single Chip Li-Ion Charge Management IC for Handheld Applications (bqTINY) |
Texas Instruments |
| 252 |
BQ24018DRCR |
Single Chip Li-Ion Charge Management IC for Handheld Applications (bqTINY) 10-VSON -40 to 125 |
Texas Instruments |
| 253 |
BQ24018DRCT |
Single Chip Li-Ion Charge Management IC for Handheld Applications (bqTINY) 10-VSON -40 to 125 |
Texas Instruments |
| 254 |
BQ24018DRCTG4 |
Single Chip Li-Ion Charge Management IC for Handheld Applications (bqTINY) 10-VSON -40 to 125 |
Texas Instruments |
| 255 |
BR230-290B1-28V-018L |
Relays |
Microsemi |
| 256 |
BR230D-290B1-28V-018L |
Relays |
Microsemi |
| 257 |
BR246D-80G3-12V-018L |
Relays |
Microsemi |
| 258 |
BR250D-320C3-28V-018 |
Relays |
Microsemi |
| 259 |
BS616LV2018 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 260 |
BS616LV2018AC |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 261 |
BS616LV2018AI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 262 |
BS616LV2018DC |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 263 |
BS616LV2018DI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 264 |
BS616LV2018TC |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 265 |
BS616LV2018TI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 266 |
BS616LV4018 |
Asynchronous 4M(256Kx16) bits Static RAM |
Brilliance Semiconductor |
| 267 |
BS616LV8018 |
Asynchronous 8M(512Kx16) bits Static RAM |
Brilliance Semiconductor |
| 268 |
BX0181Y |
IMPATT DIODE |
IPRS Baneasa |
| 269 |
BX0181Y |
IMPATT DIODE |
IPRS Baneasa |
| 270 |
BX0182Y |
IMPATT DIODE |
IPRS Baneasa |
| | | |
