No. |
Part Name |
Description |
Manufacturer |
211 |
1N4761 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
212 |
1N4762 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
213 |
1N4763 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
214 |
1N4764 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
215 |
1N4764A |
100 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
216 |
1N478 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
217 |
1N4934 |
100 V, 1 A fast silicon rectifier diode |
BKC International Electronics |
218 |
1N4934 |
100 V, 1 A, fast switching plastic rectifier |
TRANSYS Electronics Limited |
219 |
1N4934GP |
100 V, 1 A glass passivated fast recovery rectifier |
Fagor |
220 |
1N501 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
221 |
1N5186 |
100 V, 3 W silicon rectifier diode |
BKC International Electronics |
222 |
1N5186 |
100 V, 3 A fast recovery rectifier |
Solid State Devices Inc |
223 |
1N5271A |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
224 |
1N5271AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. Tolerance +-10%. |
Microsemi |
225 |
1N5271BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. Tolerance +-5%. |
Microsemi |
226 |
1N5271C |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
227 |
1N5271D |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
228 |
1N5271UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. |
Microsemi |
229 |
1N5349B |
12 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
230 |
1N5350B |
13 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
231 |
1N5351B |
14 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
232 |
1N5378B |
100 V, 5 Watt surmetic 40 silicon zener diode |
Boca Semiconductor Corporation |
233 |
1N5378B |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
234 |
1N5378B |
100 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
235 |
1N5392 |
100 V, 1.5 A silicon rectifier |
Invac |
236 |
1N5392 |
100 V, 1.5 A, plastic silicon rectifier |
TRANSYS Electronics Limited |
237 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
238 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
239 |
1N5392GP |
100 V, 1.5 A glass passivated junction rectifier |
Fagor |
240 |
1N5401 |
100 V, 3 A silicon rectifier |
Invac |
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