| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N5401 |
3 AMPS, 100 Volts Silicon Rectifier |
ITT Semiconductors |
| 242 |
1N5401 |
100 V, 3 A, high current plastic silicon rectifier |
TRANSYS Electronics Limited |
| 243 |
1N5401GP |
100 V, 3 A glass passivated junction rectifier |
Fagor |
| 244 |
1N5416 |
100 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 245 |
1N567 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 246 |
1N5814 |
100 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 247 |
1N5949 |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 248 |
1N5949A |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 249 |
1N5949B |
100 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 250 |
1N5949C |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 251 |
1N5949D |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 252 |
1N6295 |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 253 |
1N6295A |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 254 |
1N6295C |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 255 |
1N6295CA |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 256 |
1N658 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 257 |
1N660 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 258 |
1N6642U |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 259 |
1N6642U01D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 260 |
1N6642U02D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 261 |
1N6642UD1 |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 262 |
1N914 |
500mW 100 Volt Silicon Epitaxial Diodes |
Micro Commercial Components |
| 263 |
1N914 A |
500mW 100 Volt Silicon Epitaxial Diodes |
Micro Commercial Components |
| 264 |
1N914 B |
500mW 100 Volt Silicon Epitaxial Diodes |
Micro Commercial Components |
| 265 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 266 |
1N985A |
100 V, zener diode |
Leshan Radio Company |
| 267 |
1S10 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 268 |
1S2 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 269 |
1S20 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 270 |
1S3 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
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