No. |
Part Name |
Description |
Manufacturer |
211 |
2N525A |
Germanium PNP Transistor |
Motorola |
212 |
2N526 |
Germanium PNP Transistor |
COMPELEC |
213 |
2N526 |
Germanium transistor, amplification and low speed switching |
COSEM |
214 |
2N526 |
Low frequency germanium transistor |
COSEM |
215 |
2N526 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
216 |
2N526 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
217 |
2N526 |
Germanium PNP Transistor |
Motorola |
218 |
2N526 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
219 |
2N526 |
Germanium PNP transistor, low level LF amplification |
SESCOSEM |
220 |
2N5260 |
THYRISTOR |
Motorola |
221 |
2N5261 |
THYRISTOR |
Motorola |
222 |
2N5262 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
223 |
2N5262 |
Silicon NPN Transistor |
Motorola |
224 |
2N5262 |
BJT |
New Jersey Semiconductor |
225 |
2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
226 |
2N5264 |
Silicon NPN Transistor |
Motorola |
227 |
2N5264 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
228 |
2N5265 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
229 |
2N5265 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
230 |
2N5265 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
231 |
2N5266 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
232 |
2N5266 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
233 |
2N5266 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
234 |
2N5267 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
235 |
2N5267 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
236 |
2N5267 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
237 |
2N5268 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
238 |
2N5268 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
239 |
2N5268 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
240 |
2N5269 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
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